价 格: | 0.51 | |
品牌/商标: | ST/意法 | |
型号/规格: | STS10N3LH5 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
封装外形: | SMD(SO)/表面封装 | |
材料: | N-FET硅N沟道 | |
极间电容: | 35(pF) | |
漏极电流: | 11600(mA) | |
耗散功率: | 3600(mW) |
Features
Type VDSS RDS(on) max ID
STS10N3LH5 30 V 0.021 Ω 10 A
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications
Description
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM.
原装进口IRF540现货特价供应!价格虚拟,有需求请询相关销售。 V DSS = 100VRDS(on) = 44m?ID = 33AAdvanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating175 °C Operating TemperatureFast SwitchingFully Avalanche Rated
N-CHANNEL 30-V (D-S) MOSFETDESCRIPTIONAs advanced N-channel logic level enhancement MOSFET,the UT4410 is produced using UTC’s high cell density, DMOStrench technology. which has been specially tailored to minimizethe on-resistance and maintain low gate charge for superiorswitching performance.These devices can be particularly suited for such low voltageapplications: cellular phone and notebook computer powermanagement and other battery powered circuits where high-sideswitching and low in-line power loss are needed in a very smalloutline surface mount package.FEATURES* RDS(ON) < 18mΩ @VGS = 4.5V* RDS(ON) < 12mΩ @VGS = 10 V* Ultra low gate charge ( typical 11 nC )* Low reverse transfer capacitance ( CRSS = typical 35 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness