价 格: | 5.50 | |
品牌/商标: | UTC(台湾友顺) | |
型号/规格: | 9N90 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
材料: | N-FET硅N沟道 | |
开启电压: | 5(V) | |
极间电容: | 14(pF) | |
漏极电流: | 9000(mA) |
9A, 900V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 9N90 uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is suitable
for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) = 1.4Ω @VGS = 10 V
* Ultra Low Gate Charge ( Typical 45 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 14 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
DESCRIPTIONThe UT4446 uses UTC’s advanced trench technology toprovide excellent RDS(ON), low gate charge and operation with lowgate voltages. This device is suitable for use as a load switch orin PWM applications. FEATURES* RDS(ON)< 8.5mΩ @VGS=10V* RDS(ON)< 14.5mΩ @VGS=4.5V* Low capacitance* Low gate charge* Fast switching capability* Avalanche energy specified
800V N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 10N80 uses UTC’s advanced proprietary, planarstripe, DMOS technology to provide excellent RDS(ON), low gatecharge and operation with low gate voltages. This device issuitable for use as a load switch or in PWM applications.FEATURES* RDS(ON) = 1.1Ω @VGS = 10 V* Ultra low gate charge ( typical 45 nC )* Low reverse transfer capacitance ( CRSS = typical 15 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness