价 格: | 0.01 | |
品牌/商标: | FAIRCHILD/仙童 | |
型号/规格: | FQPF12N60C | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
材料: | N-FET硅N沟道 | |
开启电压: | 2(V) | |
夹断电压: | 600(V) | |
极间电容: | 21(pF) | |
低频噪声系数: | 1(dB) | |
漏极电流: | 12000(mA) | |
耗散功率: | 51000(mW) |
Features
• TO-220F,12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 21pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
FQP30N0660V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for powermanagement in portable and battery operated products.Features• 30A, 60V, RDS(on) = 0.04Ω @VGS = 10 V• Low gate charge ( typical 19 nC)• Low Crss ( typical 40 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature rating
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU800V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supplies.Features• 8A, 800V, RDS(on) = 1.55Ω @VGS = 10 V• Low gate charge ( typical 35 nC)• Low Crss ( typical 13 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• RoHS Compliant