价 格: | 面议 | |
品牌: | FAIRCHILD/仙童 | |
型号: | FGH20N6S2D | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | NF/音频(低频) | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | ALGaAS铝镓砷 | |
开启电压: | 1(V) | |
夹断电压: | 1(V) | |
跨导: | 1(μS) | |
极间电容: | 1(pF) | |
低频噪声系数: | 1(dB) | |
漏极电流: | 1(mA) | |
耗散功率: | 1(mW) |
仙童 MOS IGBT 场效应管
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本公司韩国TRINNO的一级代理商,全力致力于TRINNO的MOSFET的推广 性比价优于美格纳,及国内知名的士兰微,可以申请样品测试。"
仙童 飞兆 Fairchild代理Manufacturer:Fairchild Semiconductor Product Category:Rectifiers RoHS:dzsc/18/8785/18878598.jpg Details Configuration:Single Reverse Voltage:1200 V Package / Case:TO-220AC Recovery Time:85 ns Forward Voltage:3.2 V Forward Continuous Current:30 A Max Surge Current:300 A Reverse Current IR:1000 uA Power Dissipation:125 W Product:Ultra Fast Recovery Rectifier Packaging:Tube