价 格: | 面议 | |
品牌/商标: | TRINNO | |
型号/规格: | TMP4N60 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | ALGaAS铝镓砷 |
本公司韩国TRINNO的一级代理商,全力致力于TRINNO的MOSFET的推广 性比价优于美格纳,及国内知名的士兰微,可以申请样品测试。
"仙童 飞兆 Fairchild代理Manufacturer:Fairchild Semiconductor Product Category:Rectifiers RoHS:dzsc/18/8785/18878598.jpg Details Configuration:Single Reverse Voltage:1200 V Package / Case:TO-220AC Recovery Time:85 ns Forward Voltage:3.2 V Forward Continuous Current:30 A Max Surge Current:300 A Reverse Current IR:1000 uA Power Dissipation:125 W Product:Ultra Fast Recovery Rectifier Packaging:Tube
仙童 MOS IGBT 场效应管Manufacturer:Fairchild Semiconductor Product Category:MOSFETs RoHS:dzsc/18/8791/18879104.jpg Details Product:General Purpose MOSFETs Configuration:Single Package / Case:TO-3P Transistor Polarity:N-Channel Drain-Source Breakdown Voltage:150 V Continuous Drain Current:70 A Power Dissipation:330000 mW Forward Transconductance gFS (Max / Min):48 S Resistance Drain-Source RDS (on):0.028 Ohm @ 10 V Typical Fall Time:290 ns Typical Rise Time:420 ns Typical Turn-Off Delay Time:340 ns Packaging:Tube Gate-Source Breakdown Voltage: /- 25 V Maximum Operating Temperature:175 C Minimum Operating Temperature:- 55 C Type:MOSFET