价 格: | 面议 | |
品牌: | FAIRCHILD/仙童 | |
型号: | FOD3120 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | NF/音频(低频) | |
封装外形: | CHIP/小型片状 | |
材料: | ALGaAS铝镓砷 | |
开启电压: | 1(V) | |
夹断电压: | 1(V) | |
跨导: | 1(μS) | |
极间电容: | 1(pF) | |
低频噪声系数: | 1(dB) | |
漏极电流: | 1(mA) | |
耗散功率: | 1(mW) |
仙童部分型号到货,欲购从速:
IKW15T120 英飞凌
FQA24N50 FSC
FGL60N100BNTD FSC
HGTG30N60A4D FSC
HGTG11N120CND FSC
RHRP860 FSC
RHRP15120 FSC
RHRG30120 FSC
FFPF30U60ST FSC
FFA30U60D FSC
2N7000TA SGL160N60,SGH80N60UFD,SGH40N60UFD,FGL60N100BNTD
6N136 6N135,FOD3150,6N137 4LCX138MX FAN1112SX_NL
FAN7000D FAN7311AGX FDG6303N FDG6321C FDN5630_NL
FDS9926A FDS6690,FDS6885,FDS4559 FEP16DT
FEP16HT FFA30U60DNTU FFB3904 FJA13009TU
FJL6820TU FJL6920TU FJP13007H1TU_F080 FJP13009H2TU,FJA13009TU,FYP2010
FJP13007H2TU_F080 FJP13009H2TU_F080 FJP5027RTU_F080
FM75M8X FQA16N50 FQP7N80C,FQPF5N60C,FQP12N60C,FQPF10N60C,FQPF3N80,FQPF6N60C,FQPF6N80C
FQA32N20C FQP34N20,FDPF39N20,FSFR2100,FSFR1800,FSFR1700,FAN7527,FAN7530,FSDM0265RNB,KA5M02659RN
FQD13N10TM FQD5N50C,FQU2N60,FQA13N80 FQA9N90C FDP18N50V2 FSAM30SH60A,FSAM10SH60A,FSBB15CH60F,FSBB15CH60,FSBB20CH60F,FSBB20CH60,FSBF15CH60BT
FOD3181
Flypowers electronics co.,Ltd (飞捷电子有限公司)
Simon.yang MP:0086-139-0296 9450
Tel:0086-755-8825 0321 Fax:0086-755-8825 7896
QQ:787283808 ZIP:518131
Web:http://www.flypowers.com 服务热线:400 608 2829
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仙童 飞兆 Fairchild代理Manufacturer:Fairchild Semiconductor Product Category:MOSFETs RoHS:dzsc/18/8781/18878115.jpg Details Product:General Purpose MOSFETs Configuration:Single Package / Case:TO-220AB Transistor Polarity:N-Channel Drain-Source Breakdown Voltage:60 V Continuous Drain Current:70 A Power Dissipation:150000 mW Resistance Drain-Source RDS (on):0.014 Ohm @ 10 V Typical Fall Time:24 ns Typical Rise Time:137 ns Typical Turn-Off Delay Time:32 ns Packaging:Tube Gate-Source Breakdown Voltage: /- 20 V Maximum Operating Temperature:175 C Minimum Operating Temperature:- 55 C Type:MOSFET
仙童 MOS IGBT 场效应管Manufacturer:Fairchild Semiconductor Product Category:IGBT Transistors RoHS:dzsc/18/8782/18878210.jpg Details Package / Case:TO-247 Collector- Emitter Voltage VCEO Max:600 V Collector-Emitter Breakdown Voltage:600 V Collector-Emitter Saturation Voltage:2.2 V Maximum Gate Emitter Voltage:20 V Continuous Collector Current Ic Max:28 A Gate-Emitter Leakage Current: /- 250 nA Power Dissipation:125 W Packaging:Tube Configuration:Single