仙童FQP6N80C、仙童6N80、场效应管、MOS管、TO-220
| 价 格： | 1.00 | |
| 品牌/商标： | FAIRCHILD/仙童 | |
| 型号/规格： | FQP6N80C | |
| 种类： | 绝缘栅(MOSFET) | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 | |
| 用途： | SW-REG/开关电源 | |
| 材料： | N-FET硅N沟道 | |
| 开启电压： | 10（V） | |
| 夹断电压： | 800（V） | |
| 极间电容： | 8（pF） | |
| 低频噪声系数： | 2（dB） | |
| 漏极电流： | 6000（mA） | |
| 耗散功率： | 158000（mW） |
FQP6N80C/FQPF6N80C
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 5.5A, 800V, RDS(on) = 2.5Ω @VGS = 10 V
• Low gate charge ( typical 21 nC)
• Low Crss ( typical 8 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 陈培忠
- 电话：0755-84746465
- 传真：0755-84746465
- 手机：
- QQ ：
FQPF12N60C、仙童12N60、MOS管、场效应管
信息内容：Features• TO-220F,12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V• Low gate charge ( typical 48 nC)• Low Crss ( typical 21pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• RoHS compliant
仙童、FQP30N06、30N06、MOS、场效应管、开关电源
信息内容：FQP30N0660V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for powermanagement in portable and battery operated products.Features• 30A, 60V, RDS(on) = 0.04Ω @VGS = 10 V• Low gate charge ( typical 19 nC)• Low Crss ( typical 40 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature rating
