仙童FQPF9N50C、9N50、MOS管、场效应管
| 价 格： | 1.00 | |
| 品牌/商标： | FAIRCHILD/仙童 | |
| 型号/规格： | FQPF9N50C | |
| 种类： | 绝缘栅(MOSFET) | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 | |
| 用途： | SW-REG/开关电源 | |
| 材料： | N-FET硅N沟道 | |
| 开启电压： | 2（V） | |
| 夹断电压： | 500（V） | |
| 极间电容： | 24（pF） | |
| 低频噪声系数： | 1（dB） | |
| 漏极电流： | 9000（mA） | |
| 耗散功率： | 44000（mW） |
FQPF9N50C
500V N-Channel MOSFET
Features
• 9A, 500V, RDS(on) = 0.8Ω @VGS = 10 V
• Low gate charge (typical 28 nC)
• Low Crss (typical 24pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (typical 100ns)
Description
These N-Channel enhancement mode power field effect transistors
are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency
switched mode power supplies, active power factor correction,
electronic lamp ballasts based on half bridge topology.
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 陈培忠
- 电话：0755-84746465
- 传真：0755-84746465
- 手机：
- QQ ：
仙童、FQAF16N50、16N50、MOS、场效应管
信息内容：11.3A, 500V,RDS=0.32@VGS=10V, Low gate charge (typical 60nC)Low Crss (typical 35pF)Fast switching100% avalanche testedImproved dv/dt capability
FQP10N60C、10N60、MOS、仙童场效应管
信息内容：FQP10N60C / FQPF10N60C600V N-Channel MOSFETFeatures• 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V• Low gate charge ( typical 44 nC)• Low Crss ( typical 18 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilityDescriptionThese N-Channel enhancement mode power field effect transistorsare produced using Fairchild’s proprietary, planar stripe,DMOS technology.This advanced technology has been especially tailored to minimizeon-state resistance, provide superior switching performance,and withstand high energy pulse in the avalanche andcommutation mode. These devices are suited for high efficiencyswitched mode power supplies, active power factor correction,electronic lamp ballasts based on half bridge topology.
