仙童、FQAF16N50、16N50、MOS、场效应管
| 价 格： | 1.00 | |
| 品牌/商标： | FAIRCHILD/仙童 | |
| 型号/规格： | FQAF16N50 | |
| 种类： | 绝缘栅(MOSFET) | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 | |
| 用途： | SW-REG/开关电源 | |
| 材料： | N-FET硅N沟道 | |
| 开启电压： | 10（V） | |
| 夹断电压： | 500（V） | |
| 跨导： | 100（μS） | |
| 极间电容： | 35（pF） | |
| 低频噪声系数： | 2（dB） | |
| 漏极电流： | 160000（mA） | |
| 耗散功率： | 110000（mW） |
11.3A, 500V,RDS=0.32@VGS=10V, Low gate charge (typical 60nC)
Low Crss (typical 35pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 陈培忠
- 电话：0755-84746465
- 传真：0755-84746465
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FQP10N60C、10N60、MOS、仙童场效应管
信息内容：FQP10N60C / FQPF10N60C600V N-Channel MOSFETFeatures• 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V• Low gate charge ( typical 44 nC)• Low Crss ( typical 18 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilityDescriptionThese N-Channel enhancement mode power field effect transistorsare produced using Fairchild’s proprietary, planar stripe,DMOS technology.This advanced technology has been especially tailored to minimizeon-state resistance, provide superior switching performance,and withstand high energy pulse in the avalanche andcommutation mode. These devices are suited for high efficiencyswitched mode power supplies, active power factor correction,electronic lamp ballasts based on half bridge topology.
仙童FQP6N80C、仙童6N80、场效应管、MOS管、TO-220
信息内容：FQP6N80C/FQPF6N80C800V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supplies.Features• 5.5A, 800V, RDS(on) = 2.5Ω @VGS = 10 V• Low gate charge ( typical 21 nC)• Low Crss ( typical 8 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability
