价 格: | 2.45 | |
品牌/商标: | UTC/友顺 | |
型号/规格: | 12N65 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
材料: | N-FET硅N沟道 | |
极间电容: | 25(pF) | |
漏极电流: | 12000(mA) |
12 Amps, 650 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 12N65 are N-Channel enhancement mode power
field effect transistors (MOSFET) which are produced using UTC’s
proprietary, planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode
power supply. To minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode the advanced technology has
been especially tailored.
FEATURES
* RDS(ON) = 0.7Ω @VGS = 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
*一直都有现货,并且特价供应! Si4410DYPbF HEXFET Power MOSFETVDSS = 30V RDS(on) = 0.0135ΩN-Channel MOSFETLow On-ResistanceLow Gate ChargeSurface MountLogic Level DriveLead-FreeParameter Max. UnitsRθJA Maximum Junction-to-Ambient 50 °C/WThermal ResistanceThis N-channel HEXFET Power MOSFET isproduced using International Rectifier's advancedHEXFET power MOSFET technology. The low onresistanceand low gate charge inherent to thistechnology make this device ideal for low voltage orbattery driven power conversion applicationsThe SO-8 package with copper leadframe offersenhanced thermal characteristics that allow powerdissipation of greater that 800mW in typical boardmount applications.
DESCRIPTIONThis UD4809 N-Channel MOSFET is produced using UTCadvanced process which has been tailored to make the on-stateresistance minimum and yet maintain low gate charge forsuperior switching performance especially. The UD4809 is wellsuited for where low in-line power loss is needed in a very smalloutline surface mount package, such as low voltage and batterypowered applications. FEATURES* Low RDS(ON)* Low capacitance* Optimized gate charge"