UTC MOS管 特价热销 UD4809
| 价 格： | 0.10 | |
| 品牌/商标： | UTC/友顺 | |
| 型号/规格： | UD4809 | |
| 种类： | 绝缘栅(MOSFET) | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 | |
| 用途： | SW-REG/开关电源 | |
| 封装外形： | SMD(SO)/表面封装 | |
| 材料： | N-FET硅N沟道 |
DESCRIPTION
This UD4809 N-Channel MOSFET is produced using UTC
advanced process which has been tailored to make the on-state
resistance minimum and yet maintain low gate charge for
superior switching performance especially. The UD4809 is well
suited for where low in-line power loss is needed in a very small
outline surface mount package, such as low voltage and battery
powered applications.
FEATURES
* Low RDS(ON)
* Low capacitance
* Optimized gate charge
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 宋哲
- 电话：755-29743120
- 传真：755-29743120
- 手机：
- QQ ：
场效应管 N沟道 UT4414
信息内容：DESCRIPTIONThe UTC UT4414 is an N-channel enhancement mode FET withexcellent trench technology to provide customers perfect RDS(ON) andlow gate charge. The source leads are separated to allow a Kelvinconnection to the source, which may be used to bypass the sourceinductance.This device can be applied in a load switch or in PWMapplications. FEATURES* VDSS = 30V* ID=8.5A @VGS=10V* RDS(ON)<26mΩ @VGS=10V* RDS(ON)<40mΩ @VGS=4.5V
现货热销 UTC UT4430
信息内容：DESCRIPTIONThe UT4430 uses UTC advanced technology to provideexcellent RDS(ON), low gate charge and operation with low gatevoltages. This device is suitable for applications, such as high-sideDC/DC conversion, notebook and sever. FEATURES* VDS(V)=30V* ID=18A (VGS = 10V)* RDS(ON)<5.5mΩ@VGS=10V* RDS(ON)<7.5mΩ@VGS=4.5V* Halogen-Free "
