IR品牌30V低阻值MOSFET SI4410 SI4410DY
| 价 格： | 0.65 | |
| 品牌/商标： | IR/国际整流器 | |
| 型号/规格： | SI4410DY | |
| 种类： | 绝缘栅(MOSFET) | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 | |
| 封装外形： | SMD(SO)/表面封装 | |
| 材料： | N-FET硅N沟道 | |
| 极间电容： | 106（pF） | |
| 漏极电流： | 10000（mA） | |
| 耗散功率： | 2500（mW） |
*一直都有现货，并且特价供应！
Si4410DYPbF HEXFET Power MOSFET
VDSS = 30V RDS(on) = 0.0135Ω
N-Channel MOSFET
Low On-Resistance
Low Gate Charge
Surface Mount
Logic Level Drive
Lead-Free
Parameter Max. Units
RθJA Maximum Junction-to-Ambient 50 °C/W
Thermal Resistance
This N-channel HEXFET Power MOSFET is
produced using International Rectifier's advanced
HEXFET power MOSFET technology. The low onresistance
and low gate charge inherent to this
technology make this device ideal for low voltage or
battery driven power conversion applications
The SO-8 package with copper leadframe offers
enhanced thermal characteristics that allow power
dissipation of greater that 800mW in typical board
mount applications.
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