价 格: | 0.10 | |
品牌/商标: | UTC/友顺 | |
型号/规格: | UTD413 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
封装外形: | SMD(SO)/表面封装 | |
材料: | P-FET硅P沟道 |
DESCRIPTION
The UTD413 can provide excellent RDS(ON) and low gate charge
by using UTC’s advanced trench technology. The UTD413 is well
suited for high current load applications with the excellent thermal
resistance of the TO-252 package. Standard Product UTD413 is
Pb-free.
FEATURES
* RDS(ON) < 45mΩ @VGS = -10V
* RDS(ON) < 69mΩ @VGS = -4.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
12 Amps, 650 Volts N-CHANNEL MOSFETDESCRIPTIONThe UTC 12N65 are N-Channel enhancement mode powerfield effect transistors (MOSFET) which are produced using UTC’sproprietary, planar stripe, DMOS technology.These devices are suited for high efficiency switch modepower supply. To minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in theavalanche and commutation mode the advanced technology hasbeen especially tailored.FEATURES* RDS(ON) = 0.7Ω @VGS = 10 V* Ultra low gate charge ( typical 42 nC )* Low reverse transfer capacitance ( CRSS = typical 25 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness
*一直都有现货,并且特价供应! Si4410DYPbF HEXFET Power MOSFETVDSS = 30V RDS(on) = 0.0135ΩN-Channel MOSFETLow On-ResistanceLow Gate ChargeSurface MountLogic Level DriveLead-FreeParameter Max. UnitsRθJA Maximum Junction-to-Ambient 50 °C/WThermal ResistanceThis N-channel HEXFET Power MOSFET isproduced using International Rectifier's advancedHEXFET power MOSFET technology. The low onresistanceand low gate charge inherent to thistechnology make this device ideal for low voltage orbattery driven power conversion applicationsThe SO-8 package with copper leadframe offersenhanced thermal characteristics that allow powerdissipation of greater that 800mW in typical boardmount applications.