价 格: | 0.10 | |
品牌/商标: | UTC/友顺 | |
型号/规格: | UTP45N02 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
封装外形: | SMD(SO)/表面封装 | |
材料: | N-FET硅N沟道 |
DESCRIPTION
As N-Channel power MOSFETs the UTP45N02 is designed for
use in applications such as switching regulators, switching
converters, motor drivers and relay drivers.
FEATURES
* 45A, 20V
* RDS(ON) = 0.022Ω
* Temperature compensating PSPICE model
* Be driven directly from CMOS, NMOS, and TTL circuits
* Peak current vs. pulse width curve
DESCRIPTIONThe UTD413 can provide excellent RDS(ON) and low gate chargeby using UTC’s advanced trench technology. The UTD413 is wellsuited for high current load applications with the excellent thermalresistance of the TO-252 package. Standard Product UTD413 isPb-free. FEATURES* RDS(ON) < 45mΩ @VGS = -10V* RDS(ON) < 69mΩ @VGS = -4.5V* Low capacitance* Low gate charge* Fast switching capability* Avalanche energy specified "
12 Amps, 650 Volts N-CHANNEL MOSFETDESCRIPTIONThe UTC 12N65 are N-Channel enhancement mode powerfield effect transistors (MOSFET) which are produced using UTC’sproprietary, planar stripe, DMOS technology.These devices are suited for high efficiency switch modepower supply. To minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in theavalanche and commutation mode the advanced technology hasbeen especially tailored.FEATURES* RDS(ON) = 0.7Ω @VGS = 10 V* Ultra low gate charge ( typical 42 nC )* Low reverse transfer capacitance ( CRSS = typical 25 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness