价 格: | 0.10 | |
品牌/商标: | NCE(新洁能) | |
型号/规格: | NCE60H15 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | L/功率放大 | |
封装外形: | SMD(SO)/表面封装 | |
材料: | IGBT绝缘栅比极 |
GENERAL FEATURES
● V =60V,I =150A
DS D
RDS(ON) <4.5m? @ VGS=10V Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
粤嘉鸿电子是一家从事的电子元器件销售的一般纳税人企业,有多年的MOS管、电源IC、三极管的供应经验和渠道,是UTC(台湾友顺)的一线授权代理商。我们经营的产品广泛应用于开关电源、LED灯电源、适配器、车载逆变电源、液晶电视电源、DVD和DVB电源板、通信逆变电源、电动工具电源、应急灯电源、手机充电器等诸多领域。
DESCRIPTIONAs N-Channel power MOSFETs the UTP45N02 is designed foruse in applications such as switching regulators, switchingconverters, motor drivers and relay drivers. FEATURES* 45A, 20V* RDS(ON) = 0.022Ω* Temperature compensating PSPICE model* Be driven directly from CMOS, NMOS, and TTL circuits* Peak current vs. pulse width curve
DESCRIPTIONThe UTD413 can provide excellent RDS(ON) and low gate chargeby using UTC’s advanced trench technology. The UTD413 is wellsuited for high current load applications with the excellent thermalresistance of the TO-252 package. Standard Product UTD413 isPb-free. FEATURES* RDS(ON) < 45mΩ @VGS = -10V* RDS(ON) < 69mΩ @VGS = -4.5V* Low capacitance* Low gate charge* Fast switching capability* Avalanche energy specified "