价 格: | 1.00 | |
品牌/商标: | FAIRCHILD/仙童 | |
型号/规格: | FQP5N50C | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
材料: | N-FET硅N沟道 | |
开启电压: | 2(V) | |
夹断电压: | 500(V) | |
极间电容: | 15(pF) | |
低频噪声系数: | 1(dB) | |
漏极电流: | 5000(mA) | |
耗散功率: | 73000(mW) |
FQP5N50C/FQPF5N50C
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
• 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V
• Low gate charge ( typical 18nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQPF9N50C500V N-Channel MOSFETFeatures• 9A, 500V, RDS(on) = 0.8Ω @VGS = 10 V• Low gate charge (typical 28 nC)• Low Crss (typical 24pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• Fast recovery body diode (typical 100ns)DescriptionThese N-Channel enhancement mode power field effect transistorsare produced using Fairchild’s proprietary, planar stripe,DMOS technology.This advanced technology has been especially tailored to minimizeon-state resistance, provide superior switching performance,and withstand high energy pulse in the avalanche andcommutation mode. These devices are well suited for high efficiencyswitched mode power supplies, active power factor correction,electronic lamp ballasts based on half bridge topology.
11.3A, 500V,RDS=0.32@VGS=10V, Low gate charge (typical 60nC)Low Crss (typical 35pF)Fast switching100% avalanche testedImproved dv/dt capability