热销厂家新品推荐NCE20N60T (600V20A， TO-247封装)
| 价 格： | 0.01 | |
| 品牌/商标： | NCE(新洁能） | |
| 型号/规格： | NCE20N60T | |
| 种类： | 绝缘栅(MOSFET) | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 | |
| 用途： | SW-REG/开关电源 | |
| 封装外形： | SMD(SO)/表面封装 |
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
Application
● Power factor correction （PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply （UPS）
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现货供8mΩ之MOS管UF3205 IRF3205
信息内容：1，现货大批量供应UTC（台湾友顺）品牌MOS管。2，如果您试过我们的样品，我们支持支付宝订货（半个月内可申请退款）。 HEXFET POWER MOSFETDESCRIPTIONThe UTC UF3205 uses advanced technology to provideexcellent RDS(ON), fast switching, low gate charge, and extremelyefficient. This device is suitable for all commercial-industrialapplications at power dissipation levels to approximately 50 watts.FEATURES* RDS(ON)<8mΩ @VGS=10V* Ultra Low Gate Charge ( 146nC max )* Low Reverse Transfer Capacitance ( CRSS = typ. 211 pF )* Fast Switching Capability* Avalanche Energy Specified* Improved dv/dt Capability, High Ruggedness
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信息内容：FEATURES• Low Figure-of-Merit Ron x Qg• 100 % Avalanche Tested• High Peak Current Capability• dV/dt Ruggedness• Improved Trr/Qrr• Improved Gate Charge• High Power Dissipations Capability• Compliant to RoHS Directive 2002/95/EC
