价 格: | 2300.00 | |
品牌/商标: | UTC/友顺 | |
型号/规格: | UF3205 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 耗尽型 | |
用途: | MOS-ARR/陈列组件 | |
封装外形: | SMD(SO)/表面封装 | |
材料: | N-FET硅N沟道 |
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HEXFET POWER MOSFET
DESCRIPTION
The UTC UF3205 uses advanced technology to provide
excellent RDS(ON), fast switching, low gate charge, and extremely
efficient. This device is suitable for all commercial-industrial
applications at power dissipation levels to approximately 50 watts.
FEATURES
* RDS(ON)<8mΩ @VGS=10V
* Ultra Low Gate Charge ( 146nC max )
* Low Reverse Transfer Capacitance ( CRSS = typ. 211 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
FEATURES• Low Figure-of-Merit Ron x Qg• 100 % Avalanche Tested• High Peak Current Capability• dV/dt Ruggedness• Improved Trr/Qrr• Improved Gate Charge• High Power Dissipations Capability• Compliant to RoHS Directive 2002/95/EC
1,高品质国产1225和PCR406现货热卖!MEDIUM POWER LOW VOLTAGE TRANSISTORDESCRIPTIONThe XL1225/ML1225 silicon controlled rectifiers are highperformance planner diffused PNPN devices. These parts areintended for low cost high volume applications.ABSOLUTE MAXIMUM RATINGSPARAMETERS SYMBOL TEST CONDITION RATING UNITSRepetitive Peak Off-State VoltagePCR406-6PCR406-5VDRM Tj=40 to 125°C(RGK =1kΩ)400300VOn-State Current IT(RMS) Tc=40°C 0.8 AAverage On-State Current IT(AV) Half Cycle=180, Tc=40°C 0.5 APeak Reverse Gate Voltage VGRM IGR=10uA 1 VPeak Gate Current IGM 10us Max. 0.1 AGate Dissipation PG(AV) 20ms Max. 150 mWOperating Temperature Tj -40~125 °CStorage Temperature TSTG -40~125 °CSoldering Temperature TSLD 1.6mm from case 10s Max. 250 °C"