仙童、FJP13009H2TU、J13009-2、13009、三极管、开关管
| 价 格： | 1.00 | |
| 是否提供加工定制： | 否 | |
| 品牌/商标： | FAIRCHILD/仙童 | |
| 型号/规格： | FJP13009H2TU | |
| 应用范围： | 开关 | |
| 材料： | 硅(Si) | |
| 极性： | NPN型 | |
| 击穿电压VCBO： | 700（V） | |
| 集电极允许电流ICM： | 12（A） | |
| 集电极耗散功率PCM： | 100（W） | |
| 截止频率fT： | 4（MHz） | |
| 结构： | 点接触型 | |
| 封装形式： | TO-220 |
VCBO Collector-Base Voltage 700 V
V CEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 9 V
IC Collector Current (DC) 12 A
ICP Collector Current (Pulse) 24 A
IB Base Current 6 A
PC Collector Dissipation (TC=25°C) 100 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 陈培忠
- 电话：0755-84746465
- 传真：0755-84746465
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仙童FQP5N50C、5N50、MOS管、场效应管、
信息内容：FQP5N50C/FQPF5N50C500V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballastsbased on half bridge topology.Features• 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V• Low gate charge ( typical 18nC)• Low Crss ( typical 15pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability
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