FQA38N30、38N30、MOS管、场效应管
| 价 格： | 1.00 | |
| 品牌/商标： | FAIRCHILD/仙童 | |
| 型号/规格： | FQA38N30 | |
| 种类： | 绝缘栅(MOSFET) | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 | |
| 用途： | SW-REG/开关电源 | |
| 材料： | N-FET硅N沟道 | |
| 开启电压： | 3（V） | |
| 夹断电压： | 300（V） | |
| 极间电容： | 70（pF） | |
| 低频噪声系数： | 2（dB） | |
| 漏极电流： | 38000（mA） | |
| 耗散功率： | 290000（mW） |
FQA38N30
N-Channel MOSFET
300V, 38A, 0.085?
Features
•RDS(on) = 0.07? ( Typ.) @ VGS = 10V, ID = 19A
•Low gate charge ( typical 60 nC)
•Low Crss ( typical 60 pF)
•Fast switching
•100% avalanche tested
•Improved dv/dt capability
•ESD Improved capability
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 陈培忠
- 电话：0755-84746465
- 传真：0755-84746465
- 手机：
- QQ ：
仙童、FJP13009H2TU、J13009-2、13009、三极管、开关管
信息内容：VCBO Collector-Base Voltage 700 VV CEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 9 VIC Collector Current (DC) 12 AICP Collector Current (Pulse) 24 AIB Base Current 6 APC Collector Dissipation (TC=25°C) 100 WTJ Junction Temperature 150 °CTSTG Storage Temperature - 65 ~ 150 °C
仙童FQP5N50C、5N50、MOS管、场效应管、
信息内容：FQP5N50C/FQPF5N50C500V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballastsbased on half bridge topology.Features• 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V• Low gate charge ( typical 18nC)• Low Crss ( typical 15pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability
