FQPF10N60CF FAIRCHILD场效应管 仙童MOS管
| 价 格： | 2650.00 | |
| 品牌/商标： | FAIRCHILD/仙童 | |
| 型号/规格： | FQP10N60C | |
| 种类： | 绝缘栅(MOSFET) | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 | |
| 用途： | SW-REG/开关电源 | |
| 封装外形： | SMD(SO)/表面封装 | |
| 材料： | N-FET硅N沟道 |
FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
Features
• 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transistors
are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency
switched mode power supplies, active power factor correction,
electronic lamp ballasts based on half bridge topology.
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