现货特价热销 NCE（新洁能）NCE05N65 完美替代7N60/8N60
| 价 格： | 0.10 | |
| 品牌/商标： | NCE（新洁能） | |
| 型号/规格： | NCE05N65 | |
| 种类： | 绝缘栅(MOSFET) | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 | |
| 用途： | SW-REG/开关电源 | |
| 封装外形： | SMD(SO)/表面封装 | |
| 材料： | N-FET硅N沟道 |
General Description
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 宋哲
- 电话：755-29743120
- 传真：755-29743120
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FQPF10N60CF FAIRCHILD场效应管 仙童MOS管
信息内容：FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFETFeatures• 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V• Low gate charge ( typical 44 nC)• Low Crss ( typical 18 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilityDescriptionThese N-Channel enhancement mode power field effect transistorsare produced using Fairchild’s proprietary, planar stripe,DMOS technology.This advanced technology has been especially tailored to minimizeon-state resistance, provide superior switching performance,and withstand high energy pulse in the avalanche andcommutation mode. These devices are well suited for high efficiencyswitched mode power supplies, active power factor correction,electronic lamp ballasts based on half bridge topology.dzsc/18/8746/18874647.jpg
可比IRF460的优质台产大功率MOS管
信息内容：1、高品质大功率台产UTC品牌MOS管。2、该物料价格为虚拟价格，详情请垂询我们的业务人员。 21 Amps, 500 Volts N-CHANNEL POWER MOSFETDESCRIPTIONThe UF460 uses advanced UTC technology to provideexcellent RDS(ON), low gate charge and operation with low gatevoltages. This device is suitable for use as a load switch, in PWMapplications, motor controls, inverters, choppers, audio amplifiersand high energy pulse circuits.FEATURES* RDS(ON) =310mΩ@VGS= 10V, ID =21A* Ultra low gate charge (max. 190nC )* Low reverse transfer capacitance ( CRSS = typical 250pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capabilitySYMBOL1.Gate3.Source2.DrainLead-free: UF460LHalogen-free: UF460G"
