价 格: | 0.68 | |
品牌/商标: | AOS(万代) | |
型号/规格: | AO4476 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
封装外形: | SMD(SO)/表面封装 | |
材料: | N-FET硅N沟道 |
1,完美替代仙童、IR、AOS同参数产品,超低导通阻抗。
2,常备大量现货,特价热销,可立即发货。
3,可免费索样,支持支付宝交易,并承担产品质量因起的损失!
DESCRIPTION
The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =30V,ID =10A
RDS(ON) < 13.5mΩ @ VGS=10V
RDS(ON) < 20mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
Application
●Power switching application
●Hard Switched and High Frequency Circuits
●Uninterruptible Power Supply
General DescriptionThe series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.Features●New technology for high voltage device●Low on-resistance and low conduction losses●Small package●Ultra Low Gate Charge cause lower driving requirements●100% Avalanche Tested●ROHS compliant"
FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFETFeatures• 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V• Low gate charge ( typical 44 nC)• Low Crss ( typical 18 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilityDescriptionThese N-Channel enhancement mode power field effect transistorsare produced using Fairchild’s proprietary, planar stripe,DMOS technology.This advanced technology has been especially tailored to minimizeon-state resistance, provide superior switching performance,and withstand high energy pulse in the avalanche andcommutation mode. These devices are well suited for high efficiencyswitched mode power supplies, active power factor correction,electronic lamp ballasts based on half bridge topology.dzsc/18/8746/18874647.jpg