价 格: | 0.01 | |
品牌/商标: | FAIRCHILD/仙童 | |
型号/规格: | FQP5N60C | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
材料: | N-FET硅N沟道 | |
开启电压: | 2(V) | |
夹断电压: | 600(V) | |
极间电容: | 6.5(pF) | |
漏极电流: | 5000(mA) | |
耗散功率: | 100000(mW) |
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
• 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQA38N30N-Channel MOSFET300V, 38A, 0.085?Features•RDS(on) = 0.07? ( Typ.) @ VGS = 10V, ID = 19A•Low gate charge ( typical 60 nC)•Low Crss ( typical 60 pF)•Fast switching•100% avalanche tested•Improved dv/dt capability•ESD Improved capabilityDescriptionThese N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction."
VCBO Collector-Base Voltage 700 VV CEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 9 VIC Collector Current (DC) 12 AICP Collector Current (Pulse) 24 AIB Base Current 6 APC Collector Dissipation (TC=25°C) 100 WTJ Junction Temperature 150 °CTSTG Storage Temperature - 65 ~ 150 °C