价 格: | 面议 | |
品牌: | FAIRCHILD/仙童 | |
型号: | FSDM0565RBWDTU | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | NF/音频(低频) | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | SIT静电感应 | |
开启电压: | 1(V) | |
夹断电压: | 1(V) | |
跨导: | 1(μS) | |
极间电容: | 1(pF) | |
低频噪声系数: | 1(dB) | |
漏极电流: | 1(mA) | |
耗散功率: | 1(mW) |
FSC FAIRCHILD IC 半导体 电子
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FSC FAIRCHILD IC 半导体 电子Manufacturer:Fairchild Semiconductor Product Category:MOSFETs RoHS:dzsc/18/8721/18872152.jpg Details Product:General Purpose MOSFETs Configuration:Single Package / Case:TO-220 Transistor Polarity:N-Channel Drain-Source Breakdown Voltage:100 V Continuous Drain Current:55 A Power Dissipation:155000 mW Forward Transconductance gFS (Max / Min):38 S Resistance Drain-Source RDS (on):0.026 Ohm @ 10 V Typical Fall Time:140 ns Typical Rise Time:250 ns Typical Turn-Off Delay Time:110 ns Packaging:Tube Gate-Source Breakdown Voltage:+ /- 25 V Maximum Operating Temperature:175 C Minimum Operating Temperature:- 55 C Type:MOSFET
原装,现货热卖 制造商:Fairchild Semiconductor产品种类:Transistors DarlingtonRoHS:dzsc/18/8723/18872388.jpg 详细信息 配置:Single晶体管极性:NPN集电极—发射极电压 VCEO:100 V发射极 - 基极电压 VEBO:5 V集电极—基极电压 VCBO:100 V直流电集电极电流:4 A集电极截止电流:200 uA功率耗散:40 W工作温度:+ 150 C安装风格:Through Hole封装 / 箱体:TO-126封装:Tube集电极连续电流:4 A 直流集电极/Base Gain hfe Min:750 工厂包装数量:60 零件号别名:BD681STU_NL"