价 格: | 0.27 | |
封装外形: | SMD(SO)/表面封装 | |
型号/规格: | NCE8205 | |
材料: | N-FET硅N沟道 | |
用途: | TR/激励、驱动 | |
品牌/商标: | NCE | |
沟道类型: | N沟道 | |
种类: | 绝缘栅(MOSFET) | |
导电方式: | 增强型 |
Description D 1 D 2
The NCE8205 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate G 1 G 2
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application. S1 S 2
Schematic diagram
General Features
● V = 19.5V,I = 4A
DS D
RDS(ON) <37m? @ VGS=2.5V
RDS(ON) < 27m? @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired Marking and pin Assignment
● Surface Mount Package
"NCE 超结MOSFET 现货特价热销 NCE65R900F电压 650V 电流 5A 内阻 900General DescriptionThe series of devices use advanced super junctiontechnology and design to provide excellent RDS(ON) with lowgate charge. This super junction MOSFET fits the industry!ˉsAC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applications. Features New technology for high voltage device Low on-resistance and low conduction losses small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Application Power factor correctionPFC Switched mode power supplies(SMPS) Uninterruptible Power SupplyUPS"
N-CHANNEL ENHANCEMENT MODE POWER M OSFET FEATURES* Ambient operating temperature: 175°C* Low drain-source and low on-resistance* Logic level* Perfect gate charge × RDS(ON) product* Superior thermal resistance* Avalanche rated* Specified dv/dt* For fast switching buck converters* Halogen free