价 格: | 0.10 | |
封装外形: | SMD(SO)/表面封装 | |
型号/规格: | NCE65R900F | |
材料: | N-FET硅N沟道 | |
用途: | L/功率放大 | |
品牌/商标: | NCE新洁能 | |
沟道类型: | N沟道 | |
种类: | 绝缘栅(MOSFET) | |
导电方式: | 增强型 |
NCE 超结MOSFET 现货特价热销 NCE65R900F
电压 650V 电流 5A 内阻 900
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry!ˉs
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features New technology for high voltage device Low on-resistance and low conduction losses small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant
Application Power factor correctionPFC Switched mode power supplies(SMPS) Uninterruptible Power SupplyUPS
N-CHANNEL ENHANCEMENT MODE POWER M OSFET FEATURES* Ambient operating temperature: 175°C* Low drain-source and low on-resistance* Logic level* Perfect gate charge × RDS(ON) product* Superior thermal resistance* Avalanche rated* Specified dv/dt* For fast switching buck converters* Halogen free
1,以下为参考价。 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORDESCRIPTIONThe UT3418 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with low gatevoltages. This device is suitable for use as a load switch or inPWM applications.FEATURES* RDS(ON) < 60mΩ @VGS = 10 V* RDS(ON) < 70mΩ @VGS = 4.5 V* RDS(ON) < 155mΩ @VGS = 2.5 V* Low capacitance* Low gate charge* Fast switching capability* Avalanche energy specified