价 格: | 0.68 | |
品牌/商标: | UTC(台湾友顺) | |
型号/规格: | UT20N03 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 耗尽型 | |
用途: | SW-REG/开关电源 | |
封装外形: | SMD(SO)/表面封装 | |
材料: | N-FET硅N沟道 | |
漏极电流: | 120000(mA) | |
耗散功率: | 60000(mW) |
N-CHANNEL ENHANCEMENT MODE POWER M OSFET
FEATURES
* Ambient operating temperature: 175°C
* Low drain-source and low on-resistance
* Logic level
* Perfect gate charge × RDS(ON) product
* Superior thermal resistance
* Avalanche rated
* Specified dv/dt
* For fast switching buck converters
* Halogen free
1,以下为参考价。 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORDESCRIPTIONThe UT3418 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with low gatevoltages. This device is suitable for use as a load switch or inPWM applications.FEATURES* RDS(ON) < 60mΩ @VGS = 10 V* RDS(ON) < 70mΩ @VGS = 4.5 V* RDS(ON) < 155mΩ @VGS = 2.5 V* Low capacitance* Low gate charge* Fast switching capability* Avalanche energy specified
1,完美替代AOS之AO4496,同参数产品,更低导通阻抗。2,常备大量现货,特价热销,可立即发货。3,可免费索样,支持支付宝交易,并承担产品质量因起的损失!DESCRIPTIONThe NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.GENERAL FEATURES● VDS =30V,ID =10ARDS(ON) < 13.5mΩ @ VGS=10VRDS(ON) < 20mΩ @ VGS=4.5V● High density cell design for ultra low Rdson● Fully characterized Avalanche voltage and currentApplication●Power switching application●Hard Switched and High Frequency Circuits●Uninterruptible Power Supply "