价 格: | 1.00 | |
品牌/商标: | FAIRCHILD/仙童 | |
型号/规格: | FQA10N80C | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
材料: | N-FET硅N沟道 | |
开启电压: | 2(V) | |
夹断电压: | 800(V) | |
极间电容: | 15(pF) | |
漏极电流: | 10000(mA) | |
耗散功率: | 240000(mW) |
Features
• 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge topology.
FQP34N20200V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters,switch mode power supply, motor control.Features• 31A, 200V, RDS(on) = 0.075Ω @VGS = 10 V• Low gate charge ( typical 55 nC)• Low Crss ( typical 55 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• Low level gate drive requirement allowing directopration from logic drivers
Features• TO-220F,13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V• Low gate charge ( typical 43 nC)• Low Crss ( typical 20pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability