价 格: | 0.10 | |
品牌/商标: | FAIRCHILD/仙童 | |
型号/规格: | FQP34N20 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
材料: | N-FET硅N沟道 | |
开启电压: | 10(V) | |
夹断电压: | 200(V) | |
极间电容: | 55(pF) | |
低频噪声系数: | 2(dB) | |
漏极电流: | 31000(mA) | |
耗散功率: | 180000(mW) |
FQP34N20
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply, motor control.
Features
• 31A, 200V, RDS(on) = 0.075Ω @VGS = 10 V
• Low gate charge ( typical 55 nC)
• Low Crss ( typical 55 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct
opration from logic drivers
Features• TO-220F,13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V• Low gate charge ( typical 43 nC)• Low Crss ( typical 20pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability
Features• TO-220F,18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V•Low gate charge ( typical 45 nC)•Low Crss ( typical 25 pF)•Fast switching•100% avalanche tested•Improved dv/dt capability