仙童IRFP460C、P460、460、MOS管
| 价 格： | 1.00 | |
| 品牌/商标： | FAIRCHILD/仙童 | |
| 型号/规格： | IRFP460C | |
| 种类： | 绝缘栅(MOSFET) | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 | |
| 用途： | SW-REG/开关电源 | |
| 材料： | N-FET硅N沟道 | |
| 开启电压： | 10（V） | |
| 夹断电压： | 500（V） | |
| 跨导： | 20（μS） | |
| 极间电容： | 60（pF） | |
| 低频噪声系数： | 1（dB） | |
| 漏极电流： | 20000（mA） | |
| 耗散功率： | 235000（mW） |
IRFP460C
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies and
power factor corrections.
Features
• 20A, 500V, RDS(on) = 0.24Ω @VGS = 10 V
• Low gate charge ( typical 130nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 陈培忠
- 电话：0755-84746465
- 传真：0755-84746465
- 手机：
- QQ ：
仙童、FQA10N80C、10N80、MOS管、场效应管
信息内容：Features• 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V• Low gate charge ( typical 44 nC)• Low Crss ( typical 15pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• RoHS compliantDescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary, planarstripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalancheand commutation mode. These devices are well suited for highefficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridge topology."
仙童原装、FQP34N20、34N20、MOS管、TO-220
信息内容：FQP34N20200V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters,switch mode power supply, motor control.Features• 31A, 200V, RDS(on) = 0.075Ω @VGS = 10 V• Low gate charge ( typical 55 nC)• Low Crss ( typical 55 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• Low level gate drive requirement allowing directopration from logic drivers
