让卖家找上门
发布询价>>
您所在的位置:仪器仪表网> 电子元器件>MOS管、FQA38N30、38N30

MOS管、FQA38N30、38N30

价 格: 1.00
品牌/商标:FAIRCHILD/仙童
型号/规格:FQA38N30
种类:绝缘栅(MOSFET)
沟道类型:N沟道
导电方式:增强型
用途:SW-REG/开关电源
材料:N-FET硅N沟道
开启电压:10(V)
夹断电压:300(V)
极间电容:60(pF)
低频噪声系数:2(dB)
漏极电流:38000(mA)
耗散功率:312000(mW)

N-Channel MOSFET
300V, 38A, 0.085?
Features
•RDS(on) = 0.07? ( Typ.) @ VGS = 10V, ID = 19A
•Low gate charge ( typical 60 nC)
•Low Crss ( typical 60 pF)
•Fast switching
•100% avalanche tested
•Improved dv/dt capability
•ESD Improved capability
•RoHS Compliant
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

陈培忠
公司信息未核实
  • 所属城市:广东 深圳
  • [联系时请说明来自维库仪器仪表网]
  • 联系人: 陈培忠
  • 电话:0755-84746465
  • 传真:0755-84746465
  • 手机:
  • QQ :
公司相关产品

仙童IRFP460C、P460、460、MOS管

信息内容:

IRFP460C500V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supplies andpower factor corrections.Features• 20A, 500V, RDS(on) = 0.24Ω @VGS = 10 V• Low gate charge ( typical 130nC)• Low Crss ( typical 60 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability

详细内容>>

仙童、FQA10N80C、10N80、MOS管、场效应管

信息内容:

Features• 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V• Low gate charge ( typical 44 nC)• Low Crss ( typical 15pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• RoHS compliantDescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary, planarstripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalancheand commutation mode. These devices are well suited for highefficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridge topology."

详细内容>>

相关产品