价 格: | 1.00 | |
品牌/商标: | FAIRCHILD/仙童 | |
型号/规格: | FQA38N30 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
材料: | N-FET硅N沟道 | |
开启电压: | 10(V) | |
夹断电压: | 300(V) | |
极间电容: | 60(pF) | |
低频噪声系数: | 2(dB) | |
漏极电流: | 38000(mA) | |
耗散功率: | 312000(mW) |
N-Channel MOSFET
300V, 38A, 0.085?
Features
•RDS(on) = 0.07? ( Typ.) @ VGS = 10V, ID = 19A
•Low gate charge ( typical 60 nC)
•Low Crss ( typical 60 pF)
•Fast switching
•100% avalanche tested
•Improved dv/dt capability
•ESD Improved capability
•RoHS Compliant
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
IRFP460C500V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supplies andpower factor corrections.Features• 20A, 500V, RDS(on) = 0.24Ω @VGS = 10 V• Low gate charge ( typical 130nC)• Low Crss ( typical 60 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability
Features• 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V• Low gate charge ( typical 44 nC)• Low Crss ( typical 15pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• RoHS compliantDescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary, planarstripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalancheand commutation mode. These devices are well suited for highefficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridge topology."