仙童、FQH44N10、44N10、MOS、场效应管、开关电源
| 价 格： | 1.00 | |
| 品牌/商标： | FAIRCHILD/仙童 | |
| 型号/规格： | FQH44N10 | |
| 种类： | 绝缘栅(MOSFET) | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 | |
| 用途： | SW-REG/开关电源 | |
| 材料： | N-FET硅N沟道 | |
| 开启电压： | 10（V） | |
| 夹断电压： | 100（V） | |
| 跨导： | 100（μS） | |
| 极间电容： | 85（pF） | |
| 低频噪声系数： | 1（dB） | |
| 漏极电流： | 440000（mA） | |
| 耗散功率： | 180000（mW） |
FQH44N10_F133
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Features
•48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V
•Low gate charge ( typical 48 nC)
•Low Crss ( typical 85 pF)
•Fast switching
•100% avalanche tested
•Improved dv/dt capability
•175°C maximum junction temperature rating
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 陈培忠
- 电话：0755-84746465
- 传真：0755-84746465
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- QQ ：
MOS管、FQA38N30、38N30
信息内容：N-Channel MOSFET300V, 38A, 0.085?Features•RDS(on) = 0.07? ( Typ.) @ VGS = 10V, ID = 19A•Low gate charge ( typical 60 nC)•Low Crss ( typical 60 pF)•Fast switching•100% avalanche tested•Improved dv/dt capability•ESD Improved capability•RoHS CompliantDescriptionThese N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
仙童IRFP460C、P460、460、MOS管
信息内容：IRFP460C500V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supplies andpower factor corrections.Features• 20A, 500V, RDS(on) = 0.24Ω @VGS = 10 V• Low gate charge ( typical 130nC)• Low Crss ( typical 60 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability
