价 格: | 0.10 | |
品牌/商标: | UTC/友顺 | |
型号/规格: | UT3400 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
封装外形: | SMD(SO)/表面封装 | |
材料: | N-FET硅N沟道 |
DESCRIPTION
The UTC UT3400 is an N-ch enhancement MOSFET providing
the customers with perfect RDS(ON) and low gate charge. This device
can be operated with 2.5V low gate voltage.
The UTC UT3400 is optimized for applications, such as a load
switch or in PWM.
FEATURES
* VDS (V)=30V
* ID=5.8 A
* RDS(ON)<28mΩ @VGS=10V
RDS(ON)<33mΩ @VGS=4.5V
RDS(ON)<52mΩ @VGS=2.5V
DESCRIPTIONThe NCE3010S uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. Itcan be used in a wide variety of applications.GENERAL FEATURES● V =30V,I =10A RDS(ON) < 13.5m? @ VGS=10V RDS(ON) < 20m? @ VGS=4.5V● High density cell design for ultra low Rdson● Fully characterized Avalanche voltage and currentApplication● Power switching application● Hard Switched and High Frequency Circuits● Uninterruptible Power Supply "
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFETDESCRIPTIONThe UTC 12NN10 is a dual N-Channel enhancement mode powerMOSFET, it provides designer with fast switching speed, ruggedizeddevice design, low on-resistance and cost-effectiveness.FEATURES* Low Gate Charge (Typically 10nC)* 2.5A, 100V, 150mΩ @ VGS=10V* Fast Switching Speed* Simple Drive Requirement