台湾产2.5A/100V双贴片MOS管 12NN10
| 价 格： | 2.50 | |
| 品牌/商标： | UTC/友顺 | |
| 型号/规格： | 12NN10 | |
| 种类： | 绝缘栅(MOSFET) | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 | |
| 封装外形： | SMD(SO)/表面封装 | |
| 材料： | N-FET硅N沟道 | |
| 耗散功率： | 2000 | |
| 极间电容： | 420 | |
| 漏极电流： | 2500 |
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
The UTC 12NN10 is a dual N-Channel enhancement mode power
MOSFET, it provides designer with fast switching speed, ruggedized
device design, low on-resistance and cost-effectiveness.
FEATURES
* Low Gate Charge (Typically 10nC)
* 2.5A, 100V, 150mΩ @ VGS=10V
* Fast Switching Speed
* Simple Drive Requirement
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 宋哲
- 电话：0755-29743120
- 传真：0755-297431
- 手机：1392378884
- QQ ：
NCE（新洁能）NCE11N60 N沟道 现货特价热销
信息内容：General DescriptionThe series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.Features●New technology for high voltage device●Low on-resistance and low conduction losses●small package●Ultra Low Gate Charge cause lower driving requirements●100% Avalanche Tested●ROHS compliant
NCE代理，现货热销场效应管 NCE8205 SOT-23-6
信息内容：Description D 1 D 2The NCE8205 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate G 1 G 2voltages as low as 2.5V. This device is suitable for use as aBattery protection or in other Switching application. S1 S 2 Schematic diagramGeneral Features● V = 19.5V,I = 4A DS D RDS(ON) <37m? @ VGS=2.5V RDS(ON) < 27m? @ VGS=4.5V● High Power and current handing capability● Lead free product is acquired Marking and pin Assignment● Surface Mount Package"
