价 格: | 0.01 | |
品牌/商标: | NCE(新洁能) | |
型号/规格: | NCE3010S | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | S/开关 | |
封装外形: | SMD(SO)/表面封装 |
DESCRIPTION
The NCE3010S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
● V =30V,I =10A
RDS(ON) < 13.5m? @ VGS=10V
RDS(ON) < 20m? @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
"DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFETDESCRIPTIONThe UTC 12NN10 is a dual N-Channel enhancement mode powerMOSFET, it provides designer with fast switching speed, ruggedizeddevice design, low on-resistance and cost-effectiveness.FEATURES* Low Gate Charge (Typically 10nC)* 2.5A, 100V, 150mΩ @ VGS=10V* Fast Switching Speed* Simple Drive Requirement
General DescriptionThe series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.Features●New technology for high voltage device●Low on-resistance and low conduction losses●small package●Ultra Low Gate Charge cause lower driving requirements●100% Avalanche Tested●ROHS compliant