价 格: | 0.10 | |
品牌/商标: | 台湾友顺 | |
型号/规格: | UT3416 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
封装外形: | SMD(SO)/表面封装 | |
材料: | N-FET硅N沟道 |
DESCRIPTION
The UTC UT3416 is advanced n-channel enhancement
MOSFET which can provide the designer with the best combination
of excellent RDS (ON), low gate charge and low gate voltages as low
as 1.8V.When it is used as a load switch or in PWM application, the
UTC UT3416 can be considered as an ideal.
FEATURES
* VDS =20 V
* ID =6.5 A
* RDS(ON)<22 mΩ @VGS = 4.5 V
* RDS(ON) <26 mΩ @VGS = 2.5 V
* RDS(ON) <34 mΩ @VGS = 1.8 V
DESCRIPTIONThe UTC UT3400 is an N-ch enhancement MOSFET providingthe customers with perfect RDS(ON) and low gate charge. This devicecan be operated with 2.5V low gate voltage.The UTC UT3400 is optimized for applications, such as a loadswitch or in PWM. FEATURES* VDS (V)=30V* ID=5.8 A* RDS(ON)<28mΩ @VGS=10VRDS(ON)<33mΩ @VGS=4.5VRDS(ON)<52mΩ @VGS=2.5V"
DESCRIPTIONThe NCE3010S uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. Itcan be used in a wide variety of applications.GENERAL FEATURES● V =30V,I =10A RDS(ON) < 13.5m? @ VGS=10V RDS(ON) < 20m? @ VGS=4.5V● High density cell design for ultra low Rdson● Fully characterized Avalanche voltage and currentApplication● Power switching application● Hard Switched and High Frequency Circuits● Uninterruptible Power Supply "