价 格: | 0.10 | |
是否提供加工定制: | 否 | |
产品类型: | 快恢复二极管 | |
是否进口: | 是 | |
品牌/商标: | FAIRCHILD/仙童 | |
型号/规格: | RHRP8120 | |
材料: | 硅(Si) | |
主要参数: | 8A 1200V | |
用途: | 开关电源 |
8A, 1200V Hyperfast Diode
The RHRP8120 is a hyperfast diodes with soft recovery
characteristics (t
rr
< 55ns). It has half the recovery time of
ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49096.
Symbol
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
FQH44N10_F133100V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.Features•48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V•Low gate charge ( typical 48 nC)•Low Crss ( typical 85 pF)•Fast switching•100% avalanche tested•Improved dv/dt capability•175°C maximum junction temperature rating
N-Channel MOSFET300V, 38A, 0.085?Features•RDS(on) = 0.07? ( Typ.) @ VGS = 10V, ID = 19A•Low gate charge ( typical 60 nC)•Low Crss ( typical 60 pF)•Fast switching•100% avalanche tested•Improved dv/dt capability•ESD Improved capability•RoHS CompliantDescriptionThese N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.