价 格: | 3.00 | |
品牌/商标: | Alpha/阿尔法 | |
型号/规格: | AOU401 | |
种类: | 结型(JFET) | |
沟道类型: | P沟道 | |
导电方式: | 增强型 | |
封装外形: | SMD(SO)/表面封装 | |
材料: | GE-P-FET锗P沟道 | |
开启电压: | 1(V) | |
夹断电压: | 1(V) | |
极间电容: | 1(pF) | |
低频噪声系数: | 1(dB) | |
漏极电流: | 1(mA) | |
耗散功率: | 1(mW) |
dzsc/18/8659/18865965.jpg
AOU401
P-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = -60V
ID = -26 A (VGS = -10V)
RDS(ON) < 40 mΩ (VGS = -10V) @ 20A
RDS(ON) < 55 mΩ (VGS = -4.5V)
General Description
The AOU401 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOU401 is Pb-free (meets ROHS & Sony
259 specifications). AOU401L is a Green Product
ordering option. AOU401 and AOU401L are
electrically identical.
263 262 252 251 223 MOS管
dzsc/18/8661/18866134.jpg263 262 252 251 223 MOS管"
dzsc/18/8664/18866405.jpgAOU402N-Channel Enhancement Mode Field Effect TransistorFeaturesVDS (V) = 60VID = 12 A (VGS = 10V)RDS(ON) < 60 mΩ (VGS = 10V)RDS(ON) < 85 mΩ (VGS = 4.5V)General DescriptionThe AOU402 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gatecharge. This device is suitable for use in PWM, loadswitching and general purpose applications. StandardProduct AOU402 is Pb-free (meets ROHS & Sony259 specifications). AOU402L is a Green Productordering option. AOU402 and AOU402L areTO-251263 262 252 251 223 MOS管