三极管KSD880-Y
| 价 格： | 0.42 | |
| 是否提供加工定制： | 是 | |
| 品牌/商标： | FAIRCHILD/仙童 | |
| 型号/规格： | KSD880-Y | |
| 应用范围： | 达林顿 | |
| 材料： | 硅(Si) | |
| 极性： | NPN型 | |
| 集电极允许电流ICM： | `（A） | |
| 集电极耗散功率PCM： | `（W） | |
| 截止频率fT： | `（MHz） | |
| 结构： | 平面型 | |
| 封装形式： | 直插型 | |
| 封装材料： | 金属封装 |
KSD880
Low Frequency Power Amplifier
• Complement to KSB834
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
hFE Classification
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current 3 A
IB Base Current 0.3 A
PC Collector Dissipation (TC=25°C) 30 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB = 60V, IE = 0 100 μA
IEBO Emitter Cut-off Current VEB = 7V, IC = 0 100 μA
BVCEO Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0 60 V
hFE1
hFE2
DC Current Gain VCE = 5V, IC = 0.5A
VCE = 5V, IC = 3A
60
20
300
VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.3A 0.4 1 V
VBE(on) Base-Emitter On Voltage VCE = 5V, IC = 0.5A 0.7 1 V
fT Current Gain Bandwidth Product VCE = 5V, IC = 0.5A 3 MHz
Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 70 pF
tON Turn ON Time VCC = 30V, IC = 1A
IB1 = - IB2 = 0.2A
RL = 30Ω
0.8 μs
tSTG Storage Time 1.5 μs
tF Fall Time 0.8 μs
Classification O Y G
hFE1 60 ~ 120 100 ~ 200 150 ~ 300
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 许惠谦
- 电话：86 0755 61362389
- 传真：86075561630686
- 手机：
- QQ ：
三极管KSA940
信息内容：KSA940Vertical Deflection Output Power Amplifier• Complement to KSC2073 PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage - 150 VVCEO Collector-Emitter Voltage - 150 VVEBO Emitter-Base Voltage - 5 VIC Collector Current - 1.5 AIB Base Current - 0.5 APC Collector Dissipation (Ta=25°C) 1.5 WPC Collector Dissipation (TC=25°C) 25 WTJ Junction Temperature 150 °CTSTG Storage Temperature - 55 ~ 150 °CSymbol Parameter Test Condition Min. Typ. Max. UnitsICBO Collector Cut-off Current VCB = - 120V, IE = 0 - 10 μAIEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 10 μAhFE DC Current Gain VCE = - 10V, IC = - 500mA 40 75 140VCE (sat) Collector-Emitter Saturation Voltage IC = - 500mA, IB = - 50mA - 1.5 VVBE(on) Base-Emitter ON Voltage VCE = - 10V, IC = - 500mA - 0.65 - 0.75 - 0.85 VfT Current Gain Bandwidth Product VCE = - 10V, IC = - 500mA 4 MHzCob Output Capacitance VCB ...
批发供应场效应管ST2302
信息内容：N Channel Enchancement Mode MOSFET ST23023.6ADESCRIPTIONThe ST2302 is the N-Channel logic enhancement mode power field effect transistor areproduced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone andnotebook computer power management and other batter powered circuits, and low in-linepower loss are needed in a very small outine surface mount package. FEATUREz 20V/3.6A, RDS(ON) = 80m-ohm@VGS = 4.5Vz 20V/2.4A, RDS(ON) = 95m-ohm@VGS = 2.5Vz Super high density cell design forextremely low RDS(ON)z Exceptional on-resistance and maximumDC current capabilityz SOT-23-3L package design
