价 格: | 0.42 | |
是否提供加工定制: | 是 | |
品牌/商标: | FAIRCHILD/仙童 | |
型号/规格: | KSA940 | |
应用范围: | 达林顿 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
集电极允许电流ICM: | ·(A) | |
集电极耗散功率PCM: | ·(W) | |
截止频率fT: | ·(MHz) | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
KSA940
Vertical Deflection Output Power Amplifier
• Complement to KSC2073
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage - 150 V
VCEO Collector-Emitter Voltage - 150 V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current - 1.5 A
IB Base Current - 0.5 A
PC Collector Dissipation (Ta=25°C) 1.5 W
PC Collector Dissipation (TC=25°C) 25 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB = - 120V, IE = 0 - 10 μA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 10 μA
hFE DC Current Gain VCE = - 10V, IC = - 500mA 40 75 140
VCE (sat) Collector-Emitter Saturation Voltage IC = - 500mA, IB = - 50mA - 1.5 V
VBE(on) Base-Emitter ON Voltage VCE = - 10V, IC = - 500mA - 0.65 - 0.75 - 0.85 V
fT Current Gain Bandwidth Product VCE = - 10V, IC = - 500mA 4 MHz
Cob Output Capacitance VCB = - 10V, IE = 0
f = 1MHz
55
pF
N Channel Enchancement Mode MOSFET ST23023.6ADESCRIPTIONThe ST2302 is the N-Channel logic enhancement mode power field effect transistor areproduced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone andnotebook computer power management and other batter powered circuits, and low in-linepower loss are needed in a very small outine surface mount package. FEATUREz 20V/3.6A, RDS(ON) = 80m-ohm@VGS = 4.5Vz 20V/2.4A, RDS(ON) = 95m-ohm@VGS = 2.5Vz Super high density cell design forextremely low RDS(ON)z Exceptional on-resistance and maximumDC current capabilityz SOT-23-3L package design