供应三极管 13003(图)
| 价 格： | 面议 | |
| 品牌/商标： | SI | |
| 型号/规格： | 13003 | |
| 应用范围： | 功率 | |
| 材料： | 硅 | |
| 极性： | NPN型 | |
| 击穿电压VCBO： | 700（V） | |
| 集电极允许电流ICM： | 2.0（A） | |
| 集电极耗散功率PCM： | 50（W） | |
| 截止频率fT： | 8（MHz） | |
| 结构： | 平面型 | |
| 封装形式： | TO-220 | |
| 封装材料： | 塑料封装 |
厂家特价直销.欢迎来电咨询！
MJE13003 TRANSISTOR(NPN)
1:FEATURES
Power switching applications
2:MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
symbol | parameter | value | units |
Vcbo | Collector-Base Voltage | 700 | V |
Vceo | Collector-Emitter Voltage | 400 | V |
Vebo | Emitter-Base Voltage | 9 | V |
Ic | Collector Current-Continuous（DC） | 4 | A |
Ic | Collector Current-Continuous(Pulse) | 8 | A |
IB | Base Current | 2 | A |
Pc | Collector Power Dissipation | 50 | W |
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55-150 | ℃ |
3:ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified)
Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
Collector-base breakdown voltage | V(BR)cbo | IC=1mA IE=0 | 700 |
|
| V |
Collector-emitter breakdown voltage | V(BR)ceo | IC=10mA IB=0 | 400 |
|
| V |
Emitter-base breakdown voltage | V(BR)ebo | IE=1mA IC=0 | 9 |
|
| V |
Collector cut-off Current | Icbo | Vcb=700V IE=0 |
|
| 1 | mA |
Collector cut-off Current | Iceo | Vce=400V IB=0 |
|
| 0.1 | mA |
Emitter cut-off Current | Iebo | Veb=9V IC=0 |
|
| 1 | mA |
DC Current gain | hEF(1) | Vce=5V IC=1A Vce=5V IC=2A | 10+ 8 |
| 40 40 |
|
Collector-emitter saturation voltage | VCE(sat) | IC=1A IB=0.2A IC=4A IB=1A |
|
| 0.5 1 | V |
Base -emitter saturation voltage | VBE(sat) | IC=2A IB=0.1A |
|
| 1.2 | V |
Transition frequency | fT | Vce=10VIC=500mA f=1MHZ | 4 |
|
| MHZ |
Fall time | tf | VCC=5V IC=0.5A UI9600 IC=0.5A |
|
| 3.5 | US |
Storage time | ts | 2 |
| 5 | US |
4:CLASSIFICATION OF hEF(1)
Rank |
|
|
|
|
|
|
|
|
Range | 8-15 | 15-18 | 18-20 | 20-23 | 23-25 | 25-28 | 28-30 | 30-40 |
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信息内容：厂家特价直销.欢迎来电咨询！ MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 6 VIC Collector Current -Continuous 800 mATJ, Tstg Junction and Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA , IE=0 40 VCollector-emitter breakdown voltage V(BR)CEO* IC= 0.1mA , IB=0 25 VEmitter-base breakdown voltage V(BR)EBO IE= 100μA , IC=0 6 VCollector cut-off current ICBO VCB= 35V , IE=0 0.1 μACollector cut-off current ICEO VCE= 20V , IB=0 0.1 μAhFE(1) VCE=1V, IC=5mA 45 hFE(2) VCE=1V, IC=100mA 80 400 DC current gain hFE（3） VCE=1V, IC=800mA 40 Collector-emitter saturation voltage VCE(sat) IC= 800mA, IB=80mA 0.5 VBase-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 VTransition frequency f T VCE=6V, IC= 20mA , f=30...
