价 格: | 面议 | |
品牌/商标: | ST/意法 | |
型号/规格: | L7806CV | |
应用范围: | 功率 | |
材料: | 锗 | |
极性: | NPN型 | |
击穿电压VCBO: | 6(V) | |
集电极允许电流ICM: | 1,5(A) | |
结构: | 扩散型 | |
封装形式: | 金属封装 | |
封装材料: | 金属封装 |
产品广泛适用于各种电源稳压电路
L7805CV, L7806CV, L7808CV, L7809CV, L7812CV
z Output Voltages of 5,6,8,9,12V
z Output Current To 1.5A
z Output Voltage Offered in 4% Tolerance
z Dropout Voltage 2V
z Intemal Thermal Overload Protection
z Intemal Short Circuit Current Limiting
z Output Transistor Safe-Area Compensation
厂家特价直销.欢迎来电咨询! MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 6 VIC Collector Current -Continuous 800 mATJ, Tstg Junction and Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA , IE=0 40 VCollector-emitter breakdown voltage V(BR)CEO* IC= 0.1mA , IB=0 25 VEmitter-base breakdown voltage V(BR)EBO IE= 100μA , IC=0 6 VCollector cut-off current ICBO VCB= 35V , IE=0 0.1 μACollector cut-off current ICEO VCE= 20V , IB=0 0.1 μAhFE(1) VCE=1V, IC=5mA 45 hFE(2) VCE=1V, IC=100mA 80 400 DC current gain hFE(3) VCE=1V, IC=800mA 40 Collector-emitter saturation voltage VCE(sat) IC= 800mA, IB=80mA 0.5 VBase-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 VTransition frequency f T VCE=6V, IC= 20mA , f=30...