价 格: | 10.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SC3850 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min)
·Good Linearity of hFE
·High Collector Current
APPLICATIONS
·Designed for power switching and general purpose
applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 500 | V |
VCES | Collector-Emitter Voltage | 500 | V |
VCEO | Collector-Emitter Voltage | 400 | V |
VEBO | Emitter-Base voltage | 7 | V |
IC | Collector Current-Continuous | 20 | A |
ICM | Collector Current-Peak | 30 | A |
IB | Base Current-Continuous | 6 | A |
PC | Collector Power Dissipation @ TC=25℃ | 125 | W |
Collector Power Dissipation @ Ta=25℃ | 2.5 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 0.5A; L= 25mH | 400 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 10A; IB= 2A |
|
| 1.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 10A; IB= 2A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 500V ; IE= 0 |
|
| 100 | μA |
IEBO | Emitter Cutoff Current | VEB= 7V; IC= 0 |
|
| 100 | μA |
hFE-1 | DC Current Gain | IC= 2A ; VCE= 5V | 15 |
|
|
|
hFE-2 | DC Current Gain | IC= 10A ; VCE= 5V | 10 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= 1A ; VCE= 10V; f= 1MHz |
| 15 |
| MHz |
Switching Times | ||||||
ton | Turn-on Time | IC= 10A, IB1= -IB2= 2A; VCC= 125V |
|
| 1.0 | μs |
tstg | Storage Time |
|
| 2.5 | μs | |
tf | Fall Time |
|
| 1.0 | μs |
iscSilicon NPN Power Transistors ·Low Saturation Voltage·Good Linearity of hFE·Fast Switching Speeds·Complement to Type D45C1APPLICATIONS·Designed for various specific and general purpose applicationsuch as: output and driver stages of amplifiers operating atfrequencies from DC to greater than 1.0MHz series, shuntand switching regulators; low and high frequency inverters/converters and many others.SYMBOLPARAMETERVALUEUNITVCESCollector-Emitter Voltage40VVCEOCollector-Emitter Voltage30VVEBOEmitter-Base Voltage5VICCollector Current-Continuous4AICMCollector Current-Peak6AIBBase Current-Continuous1APCCollector Power Dissipation@TC=25℃30WTjJunction Temperature150℃TstgStorageTemperature Range-55~150℃
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -160V(Min)·Wide Area of Safe Operation·Complement to Type 2SD2066 APPLICATIONS·Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage -160VVCEOCollector-Emitter Voltage -160VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous-12AICPCollector Current-Pulse-20APCCollector Power Dissipation@ TC=25℃120WCollector Power Dissipation@ Ta=25℃2.5TJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCE(sat)Collector-Emitter Saturation VoltageIC= -8A; IB= -0.8A -2.0VVBE(on)Base-Emitter On VoltageIC= -8A; VCE= -5V -1.8VICBOCollector Cutoff CurrentVCB= -160V; IE= 0 -50μAIEBOEmitter Cutoff CurrentVEB= -3V; IC= 0 -50μAhFE-1DC Curr...