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2SC3850 无锡固电ISC供应三极管

价 格: 10.00
是否提供加工定制:
品牌/商标:ISC
型号/规格:2SC3850
应用范围:放大
材料:硅(Si)
极性:NPN型
结构:平面型
封装形式:直插型
封装材料:塑料封装

DESCRIPTION                                             

·High Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 400V(Min)

·Good Linearity of hFE

·High Collector Current

 

 

APPLICATIONS

·Designed for power switching and general purpose

applications.

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                     

500

V

VCES

Collector-Emitter Voltage                        

500

V

VCEO

Collector-Emitter Voltage                        

400

V

VEBO

Emitter-Base voltage

7

V

IC

Collector Current-Continuous

20

A

ICM

Collector Current-Peak

30

A

IB

Base Current-Continuous

6

A

PC

Collector Power Dissipation

@ TC=25

125

W

Collector Power Dissipation

@ Ta=25

2.5

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-55~150

 

ELECTRICAL CHARACTERISTICS


TC=25unless otherwise specified


SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage                        

IC= 0.5A; L= 25mH

400

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 10A; IB= 2A

 

 

1.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 10A; IB= 2A

 

 

1.5

V

ICBO

Collector Cutoff Current

VCB= 500V ; IE= 0

 

 

100

μA

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

 

 

100

μA

hFE-1

DC Current Gain

IC= 2A ; VCE= 5V

15

 

 

 

hFE-2

DC Current Gain

IC= 10A ; VCE= 5V

10

 

 

 

fT

Current-Gain—Bandwidth Product

IC= 1A ; VCE= 10V; f= 1MHz

 

15

 

MHz

Switching Times

ton

Turn-on Time

IC= 10A, IB1= -IB2= 2A; VCC= 125V

 

 

1.0

μs

tstg

Storage Time

 

 

2.5

μs

tf

Fall Time

 

 

1.0

μs


 


无锡固电半导体股份有限公司
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  • 所属城市:江苏 无锡
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  • 联系人: 谈增琴
  • 电话:0510-85346980
  • 传真:0510-85346750
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  • QQ :QQ:804049824
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