价 格: | 7.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SB1373 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | PNP型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min)
·Wide Area of Safe Operation
·Complement to Type 2SD2066
APPLICATIONS
·Designed for high power amplifications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -160 | V |
VCEO | Collector-Emitter Voltage | -160 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -12 | A |
ICP | Collector Current-Pulse | -20 | A |
PC | Collector Power Dissipation @ TC=25℃ | 120 | W |
Collector Power Dissipation @ Ta=25℃ | 2.5 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -8A; IB= -0.8A |
|
| -2.0 | V |
VBE(on) | Base-Emitter On Voltage | IC= -8A; VCE= -5V |
|
| -1.8 | V |
ICBO | Collector Cutoff Current | VCB= -160V; IE= 0 |
|
| -50 | μA |
IEBO | Emitter Cutoff Current | VEB= -3V; IC= 0 |
|
| -50 | μA |
hFE-1 | DC Current Gain | IC= -20mA; VCE= -5V | 20 |
|
|
|
hFE-2 | DC Current Gain | IC= -1A; VCE= -5V | 60 |
| 200 |
|
hFE-3 | DC Current Gain | IC= -8A; VCE= -5V | 20 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= -0.5A; VCE= -5 V; f= 1MHz |
| 15 |
| MHz |
COB | Output Capacitance | IE= 0; VCB= -10V; f= 1MHz |
| 400 |
| pF |
u hFE-2Classifications
Q | S | P |
60-120 | 80-160 | 100-200 |
"
DESCRIPTION·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 400V(Min.)·High Reliability APPLICATIONS·Automotive ignition·Switching regulator·Motor control applications Absolute maximum ratings (Ta=25℃)SYMBOLPARAMETERVALUEUNITVCERCollector-Emitter Voltage475VVCEOCollector-Emitter Voltage400VVEBOEmitter-Base Voltage6VICCollector Current- Continuous10AICMCollector Current-Peak16AIBBase Current3APCCollector Power Dissipation@TC=25℃125WTjJunction Temperature200℃TstgStorageTemperature Range-65~200℃ THERMAL CHARACTERISTICSSYMBOLPARAMETERMAXUNITRth j-cThermal Resistance, Junction to Case1.0℃/W ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYPMAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 0.2A; IB= 0; L= 10mH;Vclamp= Rated VCEO400 VVCER(SUS)Collector-Emitter Sustaining VoltageIC= 3A; RBE= 100Ω; L= 500μH475 VVCE(sat)-1Collector-Emitter Saturation VoltageIC= 3A; IB= 60mA 1.5VVCE(sat)-2Col...
DESCRIPTION ·High Voltage·DARLINGTON APPLICATIONS·Designed for automotive ignition applications and invertercircuits for motor control. Absolute maximum ratings (Ta=25℃)SYMBOLPARAMETERVALUEUNITVCESCollector-Emitter Voltage VBE= 0500VVCEOCollector-Emitter Voltage450VVEBOEmitter-Base Voltage5VICCollector Current10AICMCollector Current-peak15AIBBase Current5APCCollector Power Dissipation@TC=25℃55WTjJunction Temperature150℃TstgStorageTemperature Range-65~150℃ THERMAL CHARACTERISTICSSYMBOLPARAMETERMAXUNITRth j-cThermal Resistance, Junction to Case2.27℃/W ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 0.1A; IB= 0450 VVCE(sat)-1Collector-Emitter Saturation VoltageIC= 5A; IB= 50mA 1.8VVCE(sat)-2Collector-Emitter Saturation VoltageIC= 7A; IB= 140mA 1.8VVBE(sat)-1Base-Emitter Saturation VoltageIC= 5A; IB= 50mA 2.2VVBE(sat)-2Base-Emitter Saturation Voltage...