价 格: | 9.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SC3042 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·Fast Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 500 | V |
VCEO | Collector-Emitter Voltage | 400 | V |
VEBO | Emitter-Base Voltage | 7 | V |
IC | Collector Current-Continuous | 12 | A |
ICM | Collector Current-Peak | 25 | A |
IB | Base Current-Continuous | 4 | A |
PC | Collector Power Dissipation @ Ta=25℃ | 2.5 | W |
Collector Power Dissipation @ TC=25℃ | 100 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 10mA; RBE=∞ | 400 |
|
| V |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 12A; IB= 2.4A; L= 50μH | 400 |
|
| V |
V(BR)CBO | Collector-BaseBreakdownVoltage | IC= 1mA; IE= 0 | 500 |
|
| V |
V(BR)EBO | Emitter-BaseBreakdownVoltage | IE= 1mA; IC= 0 | 7 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 8A; IB= 1.6A |
|
| 1.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 8A; IB= 1.6A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 400V; IE= 0 |
|
| 10 | μA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 10 | μA |
hFE-1 | DC Current Gain | IC= 1.6A; VCE= 5V | 15 |
| 50 |
|
hFE-2 | DC Current Gain | IC= 8A; VCE= 5V | 8 |
|
| |
fT | Current-Gain—Bandwidth Product | IC= 1.6A; VCE= 10V |
| 20 |
| MHz |
COB | Output Capacitance | VCB= 10V; ftest= 1.0MHz |
| 160 |
| pF |
Switching times | ||||||
ton | Turn-on Time | IC= 10A, IB1= -IB2= 2A; RL= 20Ω; VCC= 200V |
|
| 1.0 | μs |
tstg | Storage Time |
|
| 2.5 | μs | |
tf | Fall Time |
|
| 1.0 | μs |
u hFE-1Classifications
L | M | N |
15-30 | 20-40 | 30-50 |
"
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 400V(Min)·Good Linearity of hFE·High Collector Current APPLICATIONS·Designed for power switching and general purposeapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 500VVCESCollector-Emitter Voltage 500VVCEOCollector-Emitter Voltage 400VVEBOEmitter-Base voltage7VICCollector Current-Continuous20AICMCollector Current-Peak30AIBBase Current-Continuous6APCCollector Power Dissipation@ TC=25℃125WCollector Power Dissipation@ Ta=25℃2.5TJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining Voltage IC= 0.5A; L= 25mH400 VVCE(sat)Collector-Emitter Saturation VoltageIC= 10A; ...
iscSilicon NPN Power Transistors ·Low Saturation Voltage·Good Linearity of hFE·Fast Switching Speeds·Complement to Type D45C1APPLICATIONS·Designed for various specific and general purpose applicationsuch as: output and driver stages of amplifiers operating atfrequencies from DC to greater than 1.0MHz series, shuntand switching regulators; low and high frequency inverters/converters and many others.SYMBOLPARAMETERVALUEUNITVCESCollector-Emitter Voltage40VVCEOCollector-Emitter Voltage30VVEBOEmitter-Base Voltage5VICCollector Current-Continuous4AICMCollector Current-Peak6AIBBase Current-Continuous1APCCollector Power Dissipation@TC=25℃30WTjJunction Temperature150℃TstgStorageTemperature Range-55~150℃