价 格: | 4.30 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | BDT88 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | PNP型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·DC Current Gain -hFE= 40(Min)@IC= -5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min)- BDT82; -80V(Min)- BDT84;
-100V(Min)- BDT86; -120V(Min)- BDT88
·Complement to TypeBDT81/83/85/87
APPLICATIONS
·Designed for use in audio output stages and general amplifer
andswitching applications
SYMBOL | PARAMETER | VALUE | UNIT | |
VCBO | Collector-Base Voltage | BDT82 | -60 | V |
BDT84 | -80 | |||
BDT86 | -100 | |||
BDT88 | -120 | |||
VCEO | Collector-Emitter Voltage | BDT82 | -60 | V |
BDT84 | -80 | |||
BDT86 | -100 | |||
BDT88 | -120 | |||
VEBO | Emitter-Base Voltage | -7 | V | |
IC | Collector Current-Continuous | -15 | A | |
ICM | Collector Current-Peak | -20 | A | |
IB | Base Current | -4 | A | |
PC | Collector Power Dissipation TC=25℃ | 125 | W | |
Tj | Junction Temperature | 150 | ℃ | |
Tstg | StorageTemperature Range | -65~150 | ℃ |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance,Junction to Case | 1 | ℃/W |
Rth j-a | Thermal Resistance,Junction to Ambient | 70 | ℃/W |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT | |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | BDT82 | IC= -30mA; IB= 0 | -60 |
|
| V |
BDT84 | -80 | ||||||
BDT86 | -100 | ||||||
BDT88 | -120 | ||||||
VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= -5A; IB= -0.5A |
|
| -1.0 | V | |
VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= -7A; IB= -0.7A |
|
| -1.6 | V | |
VBE(on) | Base-Emitter On Voltage | IC= -5A ; VCE= -4V |
|
| -1.5 | V | |
ICES | Collector Cutoff Current | VCE= 0.8VCBOmax; VBE= 0 |
|
| -1 | mA | |
ICBO | Collector Cutoff Current | VCB= VCBOmax; IE= 0 |
|
| -0.2 | mA | |
IEBO | Emitter Cutoff Current | VEB= -7V; IC= 0 |
|
| -0.1 | mA | |
hFE-1 | DC Current Gain | IC= -50mA ; VCE= -10V | 40 |
|
|
| |
hFE-2 | DC Current Gain | IC= -5A ; VCE= -4V | 40 |
|
| ||
fT | Current-Gain—Bandwidth Product | IC= -0.5A ; VCE= -10V |
| 20 |
| MHz | |
Switching Times | |||||||
ton | Turn-On Time | IC= -7A; IB1= -IB2= -0.7A |
|
| 1 | μs | |
toff | Turn-Off Time |
|
| 2 | μs |
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 400V(Min)·Fast Switching Speed·Wide Area of Safe Operation APPLICATIONS·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 500VVCEOCollector-Emitter Voltage 400VVEBOEmitter-Base Voltage7VICCollector Current-Continuous12AICMCollector Current-Peak25AIBBase Current-Continuous4APCCollector Power Dissipation@ Ta=25℃2.5WCollector Power Dissipation@ TC=25℃100TJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 10mA; RBE=∞400 VVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 12A; IB= 2.4A; L= 50μH400 VV(BR)CBOCollector-BaseBreakdownVoltage IC= 1mA; IE...
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 400V(Min)·Good Linearity of hFE·High Collector Current APPLICATIONS·Designed for power switching and general purposeapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 500VVCESCollector-Emitter Voltage 500VVCEOCollector-Emitter Voltage 400VVEBOEmitter-Base voltage7VICCollector Current-Continuous20AICMCollector Current-Peak30AIBBase Current-Continuous6APCCollector Power Dissipation@ TC=25℃125WCollector Power Dissipation@ Ta=25℃2.5TJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining Voltage IC= 0.5A; L= 25mH400 VVCE(sat)Collector-Emitter Saturation VoltageIC= 10A; ...