价 格: | 10.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | BU931 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 金属封装 |
DESCRIPTION
·High Voltage
·DARLINGTON
APPLICATIONS
·High ruggedness electronic ignitions
·High voltage ignition coil driver
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 500 | V |
VCEO | Collector-Emitter Voltage | 400 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current | 15 | A |
ICM | Collector Current-peak | 30 | A |
IB | Base Current | 1 | A |
IBM | Base Current-peak | 5 | A |
PC | Collector Power Dissipation @TC=25℃ | 175 | W |
Tj | Junction Temperature | 200 | ℃ |
Tstg | StorageTemperature Range | -65~200 | ℃ |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance, Junction to Case | 1.0 | ℃/W |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 0.1A; IB= 0;L= 10mH | 400 |
| V | |
VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= 7A; IB= 70mA |
|
| 1.6 | V |
VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= 8 A; IB= 100mA |
|
| 1.8 | V |
VCE(sat)-3 | Collector-Emitter Saturation Voltage | IC= 10 A; IB= 250mA |
|
| 1.8 | V |
VBE(sat)-1 | Base-Emitter Saturation Voltage | IC= 7A; IB= 70mA |
|
| 2.2 | V |
VBE(sat)-2 | Base-Emitter Saturation Voltage | IC= 8 A; IB= 100mA |
|
| 2.4 | V |
VBE(sat)-3 | Base-Emitter Saturation Voltage | IC= 10A; IB= 250mA |
|
| 2.5 | V |
ICES | Collector Cutoff Current | VCE= 500V;VBE= 0 VCE= 500V;VBE= 0;Tj= 125℃ |
|
| 0.1 0.5 | mA |
ICEO | Collector Cutoff Current | VCE= 450V;IB= 0 VCE= 450V;IB= 0;Tj= 125℃ |
|
| 0.1 0.5 | mA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 20 | mA |
hFE | DC Current Gain | IC= 5A ; VCE= 10V | 300 |
|
|
|
VECF | C-E Diode Forward Voltage | IF= 10A |
|
| 2.5 | V |
"
DESCRIPTION·DC Current Gain -hFE= 40(Min)@IC= -5A·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= -60V(Min)- BDT82; -80V(Min)- BDT84;-100V(Min)- BDT86; -120V(Min)- BDT88·Complement to TypeBDT81/83/85/87 APPLICATIONS·Designed for use in audio output stages and general ampliferandswitching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base VoltageBDT82-60VBDT84-80BDT86-100BDT88-120VCEOCollector-Emitter VoltageBDT82-60VBDT84-80BDT86-100BDT88-120VEBOEmitter-Base Voltage-7VICCollector Current-Continuous-15AICMCollector Current-Peak-20AIBBase Current-4APCCollector Power DissipationTC=25℃125WTjJunction Temperature150℃TstgStorageTemperature Range-65~150℃ THERMAL CHARACTERISTICSSYMBOLPARAMETERMAXUNITRth j-cThermal Resistance,Junction to Case1℃/WRth j-aThermal Resistance,Junction to Ambient70℃/WELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-EmitterSus...
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 400V(Min)·Fast Switching Speed·Wide Area of Safe Operation APPLICATIONS·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 500VVCEOCollector-Emitter Voltage 400VVEBOEmitter-Base Voltage7VICCollector Current-Continuous12AICMCollector Current-Peak25AIBBase Current-Continuous4APCCollector Power Dissipation@ Ta=25℃2.5WCollector Power Dissipation@ TC=25℃100TJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 10mA; RBE=∞400 VVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 12A; IB= 2.4A; L= 50μH400 VV(BR)CBOCollector-BaseBreakdownVoltage IC= 1mA; IE...