价 格: | 4.50 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SD5072 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
·Built-in Damper Diode
APPLICATIONS
·Designed for color TV horizontal output applications
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 1500 | V |
VCEO | Collector-Emitter Voltage | 800 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current- Continuous | 5 | A |
ICM | Collector Current-Peak | 16 | A |
PC | Collector Power Dissipation @ TC=25℃ | 60 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 4A; IB= 0.8A |
|
| 5.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 4A; IB= 0.8A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 800V ; IE= 0 |
|
| 10 | μA |
IEBO | Emitter Cutoff Current | VEB= 4V ; IC= 0 | 40 |
| 200 | mA |
hFE | DC Current Gain | IC= 1A ; VCE= 5V | 8 |
|
|
|
VECF | C-E Diode Forward Voltage | IF= 5A |
|
| 2.0 | V |
fT | Current-Gain—Bandwidth Product | IC= 1A ; VCE= 10V |
| 3 |
| MHz |
tf | Fall Time | IC= 4A , IB1= 0.8A ; IB2= -1.6A RL= 50Ω;VCC= 200V |
|
| 0.4 | μs |
DESCRIPTION ·High Voltage·DARLINGTON APPLICATIONS·High ruggedness electronic ignitions·High voltage ignition coil driver Absolute maximum ratings (Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage500VVCEOCollector-Emitter Voltage400VVEBOEmitter-Base Voltage5VICCollector Current15AICMCollector Current-peak30AIBBase Current1AIBMBase Current-peak5APCCollector Power Dissipation@TC=25℃175WTjJunction Temperature200℃TstgStorageTemperature Range-65~200℃ THERMAL CHARACTERISTICSSYMBOLPARAMETERMAXUNITRth j-cThermal Resistance, Junction to Case1.0℃/W ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 0.1A; IB= 0;L= 10mH400 VVCE(sat)-1Collector-Emitter Saturation VoltageIC= 7A; IB= 70mA 1.6VVCE(sat)-2Collector-Emitter Saturation VoltageIC= 8 A; IB= 100mA 1.8VVCE(sat)-3Collector-Emitter Saturation VoltageIC= 10 A; IB= 250mA 1.8VVBE(sat)-1Base-Emitter...
DESCRIPTION·DC Current Gain -hFE= 40(Min)@IC= -5A·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= -60V(Min)- BDT82; -80V(Min)- BDT84;-100V(Min)- BDT86; -120V(Min)- BDT88·Complement to TypeBDT81/83/85/87 APPLICATIONS·Designed for use in audio output stages and general ampliferandswitching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base VoltageBDT82-60VBDT84-80BDT86-100BDT88-120VCEOCollector-Emitter VoltageBDT82-60VBDT84-80BDT86-100BDT88-120VEBOEmitter-Base Voltage-7VICCollector Current-Continuous-15AICMCollector Current-Peak-20AIBBase Current-4APCCollector Power DissipationTC=25℃125WTjJunction Temperature150℃TstgStorageTemperature Range-65~150℃ THERMAL CHARACTERISTICSSYMBOLPARAMETERMAXUNITRth j-cThermal Resistance,Junction to Case1℃/WRth j-aThermal Resistance,Junction to Ambient70℃/WELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-EmitterSus...