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无锡固电ISC 供应BDY56三极管

价 格: 7.00
是否提供加工定制:
品牌/商标:ISC
型号/规格:BDY56
应用范围:放大
材料:硅(Si)
极性:NPN型
结构:平面型
封装形式:直插型
封装材料:金属封装

DESCRIPTION                                             

·Excellent Safe Operating Area

·DC Current Gain-

: hFE=20-70@IC= 4A

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.1 V(Max)@ IC= 4A

 

 

APPLICATIONS

·Designed for general-purpose switching and amplifier

applications

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

150

V

VCEO

Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

15

A

IB

Base Current

7

A

PC

Collector Power Dissipation@TC=25

117

W

TJ

Junction Temperature

200

Tstg

Storage Temperature

-65~200

 

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.5

/W

 

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC=200mA; IB= 0

120

 

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 4A; IB= 0.4A

 

1.1

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 10A; IB= 3.3A

 

2.5

V

VBE(on)

Base-Emitter On Voltage

IC= 4A; VCE= 4V

 

1.8

V

ICEO

Collector Cutoff Current

VCE= 60V; IB= 0

 

0.5

mA

ICEX

Collector Cutoff Current

VCE= 150V; VBE=-1.5V

VCE= 150V; VBE=-1.5V, TC=150

 

3.0

30

mA

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

 

3.0

mA

hFE-1

DC Current Gain

IC= 4A; VCE= 4V

20

70

 

hFE-2

DC Current Gain

IC= 10A; VCE= 4V

10

 

 

fT

Current Gain-Bandwidth Product

IC= 1A; VCE= 4V; f=10MHz

10

 

MHz

Switching Times

ton

Turn-On Time

IC= 5A; IB= 1A

 

0.5

μs

toff

Turn-Off Time

IC= 5A; IB1= 1A; IB2= -0.5A

 

2.0

μs

 

"

无锡固电半导体股份有限公司
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