价 格: | 7.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | BDY56 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 金属封装 |
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-
: hFE=20-70@IC= 4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC= 4A
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 150 | V |
VCEO | Collector-Emitter Voltage | 120 | V |
VEBO | Emitter-Base Voltage | 7 | V |
IC | Collector Current-Continuous | 15 | A |
IB | Base Current | 7 | A |
PC | Collector Power Dissipation@TC=25℃ | 117 | W |
TJ | Junction Temperature | 200 | ℃ |
Tstg | Storage Temperature | -65~200 | ℃ |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance,Junction to Case | 1.5 | ℃/W |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC=200mA; IB= 0 | 120 | V | |
VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= 4A; IB= 0.4A |
| 1.1 | V |
VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= 10A; IB= 3.3A |
| 2.5 | V |
VBE(on) | Base-Emitter On Voltage | IC= 4A; VCE= 4V |
| 1.8 | V |
ICEO | Collector Cutoff Current | VCE= 60V; IB= 0 |
| 0.5 | mA |
ICEX | Collector Cutoff Current | VCE= 150V; VBE=-1.5V VCE= 150V; VBE=-1.5V, TC=150℃ |
| 3.0 30 | mA |
IEBO | Emitter Cutoff Current | VEB= 7V; IC= 0 |
| 3.0 | mA |
hFE-1 | DC Current Gain | IC= 4A; VCE= 4V | 20 | 70 |
|
hFE-2 | DC Current Gain | IC= 10A; VCE= 4V | 10 |
|
|
fT | Current Gain-Bandwidth Product | IC= 1A; VCE= 4V; f=10MHz | 10 |
| MHz |
Switching Times | |||||
ton | Turn-On Time | IC= 5A; IB= 1A |
| 0.5 | μs |
toff | Turn-Off Time | IC= 5A; IB1= 1A; IB2= -0.5A |
| 2.0 | μs |
"
DESCRIPTION ·Low Collector Saturation Voltage-: VCE(sat)= -1.5V(Max.)@ IC= -5A·DC Current Gain-: hFE= 25-100 @IC= -2.5A·Complement to Type 2N4913 APPLICATIONS ·Designed for general purpose use in power amplifier andswitching circuits. SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-40VVCEOCollector-Emitter Voltage-40VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous-5AIBBase Current-Continuous-1APCCollector Power Dissipation@TC=25℃87.5WTJJunction Temperature200℃TstgStorage Temperature-65~200℃ "
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -160V(Min)·Good Linearity of hFE·Complement to Type 2SC2239 APPLICATIONS·Power amplifier applications·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage -160VVCEOCollector-Emitter Voltage -160VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous-1.5AIEEmitter Current- Continuous1.5APCTotal Power Dissipation@ TC=25℃25WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -10mA ; IB= 0-160 VV(BR)EBOEmitter-BaseBreakdownVoltageIE= -1mA ; IC= 0-5 VVCE(sat)Collector-Emitter Saturation VoltageIC= -0.5A; IB= -50mA -1.5VVBE(on)Base-Emitter On VoltageIC= -0.5A ; VCE= -5V -1.0VICBO...